Method for producing semiconductor bodies having a defined edge profile which has been obtained by etching and is covered with a glass
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United States of America Patent
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-
Oct 21, 1980
Grant Date -
N/A
app pub date -
Nov 14, 1978
filing date -
Nov 18, 1977
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for producing semiconductor bodies having a glass covered defineddge profile from a semiconductor wafer comprising the steps of applying etch resistant protective coating to a surface oxide layer on the semiconductor wafer, cutting groove-shaped recesses in the wafer in a predetermined pattern, etching the wafer through the recesses to produce a deep portion passing through at least one pn-junction, removing the surface oxide layer and etch resistant coating, applying an insulating and stabilizing glass coating to the side faces of the deep portion of the wafer, applying a contact metal coating, dividing the wafer into semiconductor bodies along the center planes of selected deep portions of the wafer and covering the surface of the semiconductor bodies with an insulating lacquer at those portions which have been exposed by the dividing step.
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