Dual wavelength optical annealing of materials
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United States of America Patent
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Nov 18, 1980
Issued Date -
N/A
app pub date -
Jun 1, 1979
filing date -
Jun 1, 1979
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A new mode of optical annealing is disclosed wherein two different wavelength pulses are used to anneal a damaged semiconductor substrate. The first pulse may be of relatively weak intensity, but is strongly absorbed by the solid substrate. The second pulse, which is not strongly absorbed by the solid substrate when in the solid phase, is strongly absorbed by the substrate when in the molten phase. Exposure to the first pulse results in the melting of the substrate, which then becomes highly absorptive to light at the wavelength of the second pulse. Readily available laser sources which are generally not highly absorbed by the semiconductor in the solid phase may thus be efficiently utilized.
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