High resolution AC silicon MOS light-valve substrate
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United States of America Patent
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Dec 16, 1980
Issued Date -
N/A
app pub date -
Nov 30, 1979
filing date -
Nov 30, 1979
priority date (Note) -
Expired
status (Latency Note)
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Abstract
There is disclosed a single crystal silicon charge storage apparatus suitable for use in an alternating current driven liquid crystal light valve having therein a moderately doped microchannel stop grid. The charge storage medium is made of a high resistivity substrate on which an MOS capacitor is formed having fast photoelectric transient response and capable of operating over a wide frequency range. A doped microgrid structure is formed in one side of the substrate to prevent charge carrier spreading at the silicon-silicon dioxide interface and to provide a focusing electric field for the charge carriers. The signal from the substrate is electrically coupled through high-reflectivity mirrors and light blocking layers to the liquid crystal.
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