Radiation sensitive device with lateral current
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United States of America Patent
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-
Dec 23, 1980
Grant Date -
N/A
app pub date -
Mar 26, 1979
filing date -
Mar 26, 1979
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A radiation sensitive solid state device employing a lateral current and a method for shortening the turn-off time of a radiation sensitive device are disclosed. The device includes a semiconductor layer of one conductivity type and a radiation sensitive element present in the semiconductor layer. The semiconductor layer forms a low resistance lateral path beneath the radiation sensitive element. The method for shortening the turn-off time includes providing a substantially lateral flow of carriers characteristic of the one conductivity type through the semiconductor layer beneath the radiation sensitive element.
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