Ion milling of thin metal films

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United States of America Patent

PATENT NO 4248688
SERIAL NO

06071649

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Metals such as platinum and palladium are preferentially removed in the presence of their metal silicides by ion milling in a noble gas atmosphere such as argon. The process can be used on semiconductor chips to remove excess platinum after platinum silicide has been formed in the contact holes.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gartner, Helmut M Wappingers Falls, NY 2 131
Petvai, Steve I Wappingers Falls, NY 8 128
Sarkary, Homi G Hopewell Junction, NY 5 132
Schnitzel, Randolph H Newburgh, NY 1 50

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