Prevention of low pressure chemical vapor deposition silicon dioxide undercutting and flaking
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United States of America Patent
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Mar 3, 1981
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N/A
app pub date -
Aug 16, 1979
filing date -
Aug 16, 1979
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Expired
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Abstract
A chemical vapor deposition process wherein a silicon nitride barrier layer greater than about 50 Angstroms in thickness is formed over a silicon substrate and a low pressure chemical vapor deposition of a chlorosilane and a nitrous oxide oxidizing gas is used to form a silicon dioxide layer over the silicon nitride layer, where the silicon dioxide layer has a thickness between 2500 and 100,000 Angstroms. This process overcomes the problem of the low pressure chemical vapor deposition of silicon dioxide that does not use the silicon nitride layer. The problem is degradation of the silicon dioxide layer during subsequent oxidation cycles.
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