Plasma etching process
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 10, 1981
Grant Date -
N/A
app pub date -
Feb 22, 1980
filing date -
Feb 22, 1980
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In an improved process for the etching of polysilicon substrates, a polysilicon substrate is exposed to plasmas of carbon tetrachloride, chlorinated gas, fluorinated gas or a gas capable of generating both chlorinated and fluorinated plasma species. The combination of a chlorinated and fluorinated etching species substantially reduces undercutting of polysilicon substrates. Improved uniformity of polysilicon etching is also achieved.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully