Method for forming a narrow dimensioned region on a body
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United States of America Patent
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-
Mar 17, 1981
Grant Date -
N/A
app pub date -
Nov 3, 1978
filing date -
Nov 3, 1978
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for forming a narrow dimensioned, for example, submicron, region on a silicon body that involves forming on the silicon body regions having substantially horizontal surfaces and substantially vertical surfaces. A layer of a very narrow dimension is formed both on the substantially horizontal and substantially vertical surfaces. Reactive ion etching is applied to the layer to substantially remove the horizontal layer while leaving the vertical layer substantially intact. The vertical layer dimension is adjusted depending upon the original thickness of the layer applied.
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