Method for forming voltage-invariant capacitors for MOS type integrated circuit device utilizing oxidation and reflow techniques
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United States of America Patent
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Apr 14, 1981
Grant Date -
N/A
app pub date -
Jul 6, 1979
filing date -
Jul 6, 1979
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
For an integrated circuit semiconductor device having a multiplicity of MOSFET elements, voltage-invariant capacitors, each with metal as one plate and either polysilicon or source-drain diffusion as the second plate, are created by regrowing a thin oxide layer to provide the dielectric of the capacitor during the normal MOSFET processing sequence.
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