Thin film deposition apparatus using an RF glow discharge
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United States of America Patent
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-
Apr 21, 1981
Grant Date -
N/A
app pub date -
Oct 1, 1979
filing date -
Oct 1, 1979
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An RF plasma deposition apparatus for depositing a film of material on substrates positioned in a vertical plane and electrically 'floating' within the glow discharge. For deposition of silicon nitride films, the apparatus is adapted to introduce silane gas in a substantially uniform and laminar flow into a coating cavity containing substrates, a ground screen electrode, and a 'hot' RF electrode, within which a glow discharge is ignited. Elemental nitrogen may be delivered to the coating cavity after being dissociated in a local, separate RF plasma called an 'atomizer' cavity. During coating, elemental nitrogen combines with elemental silicon and deposits silicon nitride upon the substrate surface.
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