US Patent No: 4,267,261

Number of patents in Portfolio can not be more than 2000

Method for full format imaging

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Abstract

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In a method for full format imaging, a solid continuous film of a dispersion imaging material is provided on a substrate and it disperses into a discontinuous film comprising space globules and free space therebetween through which free space light can pass where it is subjected to a short pulse of high intensity non-coherent radiant energy in an amount sufficient to increase the absorbed energy above a certain threshold value. The short pulse of high intensity non-coherent radiant energy is applied to the solid continuous film, through a mask, simultaneously and substantially evenly in a full format pattern to a plurality of areas thereof to cause simultaneous and substantially even dispersion of the continuous film in those pattern areas into a discontinuous film comprising the spaced globules and free space which are substantially evenly distributed in those pattern areas and through which free space light can pass. A stable finished full format image of said discontinuous film in the solid continuous film corresponding to the full format pattern of energy is rapidly and inexpensively produced and which has high contrast between the imaged and unimaged regions.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
ENERGY CONVERSION DEVICES, INC.TROY, MI210

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
de, Neufville John P Mendham, NJ 6 275
Hallman, Robert W Palisades Park, NJ 17 428
Ovshinsky, Stanford R Bloomfield Hills, MI 472 17976

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Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (143)
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6,909,656 PCRAM rewrite prevention 12 2002
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6,891,749 Resistance variable ‘on ’ memory 21 2002
6,809,362 Multiple data state memory cell 17 2002
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6,864,500 Programmable conductor memory cell structure 205 2002
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6,825,135 Elimination of dendrite formation during metal/chalcogenide glass deposition 1 2002
7,015,494 Assemblies displaying differential negative resistance 12 2002
7,071,021 PCRAM memory cell and method of making same 16 2002
7,018,863 Method of manufacture of a resistance variable memory cell 10 2002
7,364,644 Silver selenide film stoichiometry and morphology control in sputter deposition 3 2002
7,163,837 Method of forming a resistance variable memory element 7 2002
7,010,644 Software refreshed memory device and method 8 2002
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6,867,996 Single-polarity programmable resistance-variable memory element 43 2002
6,864,521 Method to control silver concentration in a resistance variable memory element 19 2002
6,856,002 Graded GexSe100-x concentration in PCRAM 20 2002
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6,882,578 PCRAM rewrite prevention 4 2003
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7,528,401 Agglomeration elimination for metal sputter deposition of chalcogenides 2 2004
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6,949,402 Method of forming a non-volatile resistance variable device 1 2004
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7,479,650 Method of manufacture of programmable conductor memory 28 2004
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6,908,808 Method of forming and storing data in a multiple state memory cell 4 2004
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7,354,793 Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element 8 2004
6,954,385 Method and apparatus for sensing resistive memory state 17 2004
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7,329,558 Differential negative resistance memory 8 2004
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7,202,520 Multiple data state memory cell 6 2005
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7,332,735 Phase change memory cell and method of formation 22 2005
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7,518,212 concentration in PCRAM 10 2005
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7,294,527 Method of forming a memory cell 7 2005
7,307,908 Software refreshed memory device and method 5 2005
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7,550,818 Method of manufacture of a PCRAM memory cell 6 2006
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7,190,608 Sensing of resistance variable memory devices 8 2006
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7,366,003 Method of operating a complementary bit resistance memory sensor and method of operation 1 2006
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7,348,209 Resistance variable memory device and method of fabrication 7 2006
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7,289,349 Resistance variable memory element with threshold device and method of forming the same 8 2006
7,366,045 Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory 0 2006
7,498,231 Multiple data state memory cell 0 2007
7,282,783 Resistance variable memory device and method of fabrication 9 2007
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7,564,731 Software refreshed memory device and method 3 2007
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8,101,936 SnSe-based limited reprogrammable cell 0 2007
7,663,137 Phase change memory cell and method of formation 11 2007
7,745,808 Differential negative resistance memory 7 2007
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8,189,366 Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance 1 2011
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ROUND ROCK RESEARCH, LLC (12)
6,867,064 Method to alter chalcogenide glass for improved switching characteristics 12 2002
6,890,790 Co-sputter deposition of metal-doped chalcogenides 3 2002
6,903,361 Non-volatile memory structure 31 2003
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7,583,551 Power management control and controlling memory refresh operations 4 2004
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6,946,347 Non-volatile memory structure 8 2004
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Minnesota Mining and Manufacturing Company (2)
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AGFA-GEVAERT N.V. (1)
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BOISE STATE UNIVERSITY (1)
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