Nondestructive method for detecting defects in photodetector and solar cell devices
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United States of America Patent
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-
Sep 1, 1981
Grant Date -
N/A
app pub date -
May 25, 1979
filing date -
May 25, 1979
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The invention described herein is a method for locating semiconductor device defects and for measuring the internal resistance of such devices by making use of the intrinsic distributed resistance nature of the devices. The method provides for forward-biasing a solar cell or other device while it is scanning with an optical spot. The forward-biasing is achieved with either an illuminator light source or an external current source.
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