Passivated thin-film hybrid circuits
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United States of America Patent
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-
Sep 8, 1981
Issued Date -
N/A
app pub date -
Jan 9, 1980
filing date -
May 30, 1978
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Thin-film microcircuit structures passivated with silicon nitride are provided in which included electrical components containing nickel, chromium or other nitride-forming metals are encapsulated in an oxide material, preferably silicon oxide. The metal-containing components are thus prevented from reacting with the silicon nitride passivation coating during through-passivation laser trimming of the components.
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