Method of fabricating surface contacts for buried layer into dielectric isolated islands
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 22, 1981
Grant Date -
N/A
app pub date -
Apr 18, 1980
filing date -
Apr 18, 1980
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Low resistance contact paths to selected buried layers in dielectrically isolated islands are formed by V-etching the selected island moats in a substrate, non-selectively diffusing impurities into the surface of the substrate and selected moats, V-etching to form all the moat structure, forming a dielectric layer on said surface and moats, applying support material to over-fill said moats and cover said surface, removing the opposite surface of said substrate to expose support material, and forming devices in said opposite surface.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully