Sapphire single crystal substrate for semiconductor devices
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United States of America Patent
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Sep 29, 1981
Issued Date -
N/A
app pub date -
May 19, 1980
filing date -
Oct 26, 1974
priority date (Note) -
Expired
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Abstract
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consists essentially of sapphire (aluminum oxide) and magnesium titanium oxide (MgTiO.sub.3). The invention also provides the aforesaid single crystal substrate in combination with a semiconductor epitaxially grown thereon. The preferred semiconductors are silicon, gallium phosphide, aluminum phosphide and zinc sulphide.
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