Method for chemical vapor deposition

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United States of America Patent

PATENT NO 4310567
SERIAL NO

06123258

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Abstract

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A gas containing a film forming component is shot through a shooting means in the form of a high speed stream of gas. The gas stream is shot toward the surface of a heated base where a film is to be deposited. The stream is directed at an inclination relative to the base surface. As the stream approaches the base surface it is subjected to the action of a high speed sucking stream of air produced by a sucking means. The sucking means causes the gas stream to flow in a V-shaped path with the upper ends of the V located at the shooting means and the sucking means, with the vertex of the V located therebetween. The film coating is placed on the surface of the base by allowing the base surface to contact the V-shaped path of the stream at the vertex of the path.

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Patent Owner(s)

Patent OwnerAddress
AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGYTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tabata, Osamu Ikeda, JP 44 478
Waseda, Mitoshi Moriyama, JP 1 11

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