Thin-film silicon solar cell with metal boride bottom electrode
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 2, 1982
Issued Date -
N/A
app pub date -
Aug 4, 1980
filing date -
Oct 30, 1979
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The invention relates to an improved thin film semiconductor p-n junction device and its method of fabrication, utilizing vacuum deposition techniques, whereby continuous/batch processing may be utilized, capable of mass producing p-n junction devices; e.g. solar cells, with large surface areas and good operating efficiency and at low cost. A novel feature of the proposed device and its method of fabrication is the formation of the bottom electrode of the device, located between the nonconducting substrate and the overlying silicon semiconductor layer, as a metal boride region which possesses several characteristics particularly necessary to the fabrication of thin film silicon solar cells for example, having improved structural and operating properties, as well as good operating efficiency.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully