Method of producing a semiconductor device
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United States of America Patent
Stats
-
Feb 16, 1982
Grant Date -
N/A
app pub date -
Aug 11, 1980
filing date -
Aug 13, 1979
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
That region of a resist film in which a contact is to be formed and that region thereof in which an interconnection is to be formed are respectively irradiated with an electron beam in a dose substantially equal to an optimum dose of the resist film and in a dose less than the optimum dose. Thereafter, the resist film is developed. By performing dry etching, an opening extending to a substrate is provided in the region in which the contact is to be formed, and the surface of an insulating film overlying the substrate is exposed in the region in which the interconnection is to be formed. After depositing a conductive metal film on the whole surface the remaining resist film is removed together with the metal film deposited thereon, whereby the contact and the interconnection are formed.
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