Process for producing a layer containing silicon and photoelectric conversion device utilizing this process
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United States of America Patent
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Mar 23, 1982
Grant Date -
N/A
app pub date -
Jul 29, 1980
filing date -
Aug 3, 1979
priority date (Note) -
Expired
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Abstract
Process for producing layers of silicon or one of its alloys in pure or doped form and able to absorb optical radiation, the layers being of limited thickness, it comprising a first stage of depositing the layer by chemical decomposition of a gaseous mixture containing silane at a temperature close to the crystallization temperature and a second stage of treating in a hydrogen plasma at a lower temperature.
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