Electron bombarded semiconductor device with doubly-distributed deflection means
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United States of America Patent
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May 4, 1982
Grant Date -
N/A
app pub date -
Jul 3, 1972
filing date -
Jul 3, 1972
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An electron bombarded semiconductor amplifier including an elongated envelope having an electron gun projecting a sheet electron beam towards a distributed element semiconductor target which propagates an output signal including a single extended area semiconductor diode or a plurality of series-connected semiconductor diodes which are reverse biased and a doubly-distributed deflection means adapted to receive an input signal and cooperate with said sheet electron beam to deflect the beam in accordance with an input signal in synchronism with electron beam velocity and target signal propagation velocity to strike the target and generate an amplifier output signal.
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