Semicrystalline silicon products
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United States of America Patent
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-
May 18, 1982
Issued Date -
N/A
app pub date -
Mar 19, 1980
filing date -
Nov 13, 1978
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of producing semicrystalline silicon by heating the silicon to a molten state and gradually cooling the silicon to mitigate disruptions in the silicon continuum and promote semicrystalline growth. The product formed is a silicon body, which may be sliced into wafers having highly ordered grains of a mean diameter of at least about one mm.
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