Sapphire single crystal substrate consisting essentially of Ga.sub.2 O.sub.3
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 8, 1982
Issued Date -
N/A
app pub date -
Feb 22, 1982
filing date -
Oct 26, 1974
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A single crystal substrate for epitaxial growth thereon of a semiconductor layer. The substrate consisting essentially of sapphire (aluminum oxide) and at least one additive selected from a group consisting of oxides of gallium. A 87 mol percent content of gallium oxide is most preferred for a silicon layer. Similarly, an additive and its content should most preferably be selected depending on the semiconductor, which may be gallium phosphide, aluminium phosphide, or zinc sulphide.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully