Photolithographic method for the manufacture of integrated circuits
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United States of America Patent
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Aug 24, 1982
Grant Date -
N/A
app pub date -
Oct 6, 1980
filing date -
Oct 6, 1980
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a photolithographic method for the manufacture of integrated circuits a mask having a pattern is imaged on a photosensitive layer coating a semiconductor substrate by a projection lens. To improve the resolving capability and to obviate adverse effects, e.g. standing waves and inhomogeneous exposure, the space between the substrate and the adjacent boundary face of a projection lens is filled during exposure with a transparent liquid having the same refractive index as the photosensitive layer.
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