Semiconductor device having an amorphous metal layer contact
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United States of America Patent
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Sep 21, 1982
Grant Date -
N/A
app pub date -
Oct 4, 1979
filing date -
Oct 4, 1979
priority date (Note) -
Expired
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Abstract
Ohmic contacts for high temperature semiconductor devices comprising a layer strongly bonded to the surface of the semiconductor in the form of an alloy of a metal in the amorphous state in which the metal is a transition metal or a refractory metal having a recrystallization temperature from the amorphous state in excess of 200.degree. C.
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