Method of forming a mesa in a semiconductor device with subsequent separation into individual devices
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United States of America Patent
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-
Oct 26, 1982
Grant Date -
N/A
app pub date -
Oct 29, 1980
filing date -
Oct 29, 1980
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of forming a mesa in a semiconductor device comprises forming a plurality of such devices on a wafer, mechanically cutting relatively wide channels to a predetermined depth in said wafer at positions around individual ones of the devices to partially separate the devices from each other. The mechanical cutting technique defines mesa walls and plain surfaces between individual devices. These channels are then etched to repair scars caused by the cutting technique and, thereafter, the wafer is broken along the center line of the channels to separate the devices from each other.
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