Latching transistor
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United States of America Patent
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-
Oct 26, 1982
Issued Date -
N/A
app pub date -
Feb 28, 1980
filing date -
Jun 14, 1978
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A latching transistor is described having both high current capacity and high turn-off gain. A selectively shorted anode emitter provides a four-layer structure capable of sustaining current flow only under those portions of a cathode emitter adjacent interdigitated gate fingers and particularly not in the center of the cathode emitter fingers or beneath contact areas. Additionally, a control region is provided for conveniently adjusting the amount of anode emitter shorting for optimizing turn-off speed, foward voltage drop, and gate triggering characteristics.
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