Plasma etching of polyimide
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United States of America Patent
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Nov 2, 1982
Grant Date -
N/A
app pub date -
Dec 30, 1981
filing date -
Dec 30, 1981
priority date (Note) -
Expired
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Abstract
An improvement in the formation of multilayer metallization systems wherein vias are formed in a dielectric insulating layer of polyimide which overlies a layer of metal such as aluminum. In accordance with the invention, the residual film remaining after oxygen plasma etching of the polyimide is efficiently removed by a second plasma etching utilizing a mixture of argon and hydrogen.
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