Method of making integrated circuits
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United States of America Patent
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Nov 30, 1982
Grant Date -
N/A
app pub date -
Nov 12, 1981
filing date -
Nov 12, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of forming in a substrate of monocrystalline silicon semiconductor material having a major surface, a plurality of islands of silicon each including an active region of the substrate adjacent the major surface and surrounded by a body of silicon dioxide separating the islands from the substrate is described.
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