Tantalum thin film capacitor

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 4364099
SERIAL NO

06179791

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A tantalum film capacitor has an .alpha.-tantalum as a lower electrode, a chemical conversion layer of .alpha.-tantalum as a dielectric and an upper electrode, an improvement involving forming a highly nitrogen-doped tantalum film between the .alpha.-tantalum and a substrate, and also, another improvement involving forming a transitional thin tantalum layer between said highly nitrogen-doped tantalum film and said .alpha.-tantalum. The nitrogen concentration of the highly nitrogen-doped tantalum film is from 14 to 30 atomic %. The electrical properties, especially leakage current, are improved over those of the prior art. A disadvantage of the conventional .alpha.-tantalum thin film capacitor, that is the necessity of using an expensive partial glazed Al.sub.2 O.sub.3 substrate, is eliminated, and a non-glazed Al.sub.2 O.sub.3 substrate can be used in the present invention.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
FUJITSU LIMITED A CORP OF JAPAN1015 KAMIKODANAKA NAKAHARA-KU KAWASAKI-SHI KANAGAWA 211

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koyama, Masataka Yokohama, JP 8 161
Satoh, Kiyoshi Kawasaki, JP 54 1311
Terashima, Minoru Kawasaki, JP 3 54

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation