Tantalum thin film capacitor

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United States of America Patent

PATENT NO 4364099
SERIAL NO

06179791

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A tantalum film capacitor has an .alpha.-tantalum as a lower electrode, a chemical conversion layer of .alpha.-tantalum as a dielectric and an upper electrode, an improvement involving forming a highly nitrogen-doped tantalum film between the .alpha.-tantalum and a substrate, and also, another improvement involving forming a transitional thin tantalum layer between said highly nitrogen-doped tantalum film and said .alpha.-tantalum. The nitrogen concentration of the highly nitrogen-doped tantalum film is from 14 to 30 atomic %. The electrical properties, especially leakage current, are improved over those of the prior art. A disadvantage of the conventional .alpha.-tantalum thin film capacitor, that is the necessity of using an expensive partial glazed Al.sub.2 O.sub.3 substrate, is eliminated, and a non-glazed Al.sub.2 O.sub.3 substrate can be used in the present invention.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
FUJITSU LIMITEDKAWASAKI18047

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koyama, Masataka Yokohama, JP 8 152
Satoh, Kiyoshi Kawasaki, JP 54 1051
Terashima, Minoru Kawasaki, JP 3 54

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Patent Info (Count) # Cites Year
 
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* Cited By Examiner