p-Si/n-CdS Heterojunction photovoltaic cells
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United States of America Patent
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Dec 28, 1982
Grant Date -
N/A
app pub date -
Aug 13, 1980
filing date -
Sep 10, 1979
priority date (Note) -
Expired
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Abstract
The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm.sup.2.
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