Importance

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Abstract

An electrostatic chucking device is positioned on a supporting base, the temperature of which is maintained at a predetermined value, the device having an insulator, and a pair of plane electrodes on the insulator, and a material being chucked on the bottom surface of the top surface of the insulator, wherein the sum of the area of portions of the pair of plane electrodes facing the direction of the material being approximately equal to the contact area between the material and the insulator, and wherein a voltage is applied between the plane electrodes from an external power source, thereby effectively electrostatically chucking the material to the supporting base. A method and an apparatus for dry etching of a material having at least a conductive portion therein, the material being chucked by using said electrostatic chucking device mounted on a supporting base, the temperature of which is maintained at a predetermined value, in at least one of a sputter etching apparatus, a reactive sputter etching apparatus, or a plasma etching apparatus, whereby the material is indirectly chucked to the supporting base, the heat conductivity between the material and the supporting base is increased, the temperature of the material is controlled effectively, and the material can be held invertedly in the horizontal plane or vertically.

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First Claim