High-voltage photovoltaic cell having a heterojunction of amorphous semiconductor and amorphous silicon
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United States of America Patent
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Jun 14, 1983
Grant Date -
N/A
app pub date -
May 19, 1981
filing date -
Jan 29, 1981
priority date (Note) -
Expired
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Abstract
A p-i-n amorphous silicon photovoltaic cell of improved conversion efficiency is obtained by incorporating, as either the p or n type side of the cell exposed to the incident light, an amorphous semiconductor which satisfies the requirements that the optical band gap, Eg.opt, be not less than about 1.85 eV, the electric conductivity be not less than about 10.sup.-8 (.OMEGA..cm).sup.-1 the p-i-n junction diffusion potential, Vd, be not less than about 1.1 volts, and be formed of a substance represented by one of the general formulas, a-Si.sub.1-x C.sub.x and a-Si.sub.1-y N.sub.y.
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