Photoresist stripping composition and method
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United States of America Patent
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Jul 26, 1983
Grant Date -
N/A
app pub date -
Nov 23, 1981
filing date -
Nov 23, 1981
priority date (Note) -
Expired
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Abstract
An organic photoresist stripping composition especially for use with silicon wafers having an insulating layer and metallization on the wafers contains an organic sulfonic acid and 1,2 dihydroxybenzene. The composition also preferably includes a polar or nonpolar, organic solvent. This composition will remove both positive and negative photoresist from wafers without attack on either aluminum metallization or silicon dioxide insulation layers when used to contact the photoresist on the wafers.
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