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Abstract

A solid-state microwave signal amplifying and multiplying apparatus capable of substantially continuous tuning over an extended frequency range in the microwave region. A single gallium arsenide metal semiconductor field-effect transistor (MESFET) is switchably coupled by means of PIN diodes through selected output matching networks consisting of relatively narrowband frequency sections. Bias to the MESFET is provided through PIN diodes in a manner to select a linear (fundamental frequency) or nonlinear (multiplied frequency) operating region. In this manner a single microwave active device may be utilized with a plurality of passive networks to achieve extremely wideband amplification meeting good amplification and impedance matching criteria.

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