Composite MOS/bipolar power device
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United States of America Patent
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-
Aug 30, 1983
Grant Date -
N/A
app pub date -
Jan 12, 1981
filing date -
Jan 12, 1981
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A merged MOS/bipolar structure for high current device applications. Using the same process sequence both an MOS device as a bipolar device are formed in a single semiconductor substrate. Integral input circuitry means couples the input terminals of the individual devices to the composite input terminal to control the relative currents carried by the individual devices as a function of the input signal.
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