Plasma etching process and apparatus

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United States of America Patent

PATENT NO 4405406
SERIAL NO

06386826

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Abstract

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A plasma etching process and apparatus wherein a gas plasma comprising dichlorofluoro-methane (CHCl.sub.2 F) etches a film.

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Patent Owner(s)

Patent OwnerAddress
SPERRY RAND CORPORATION 1290 AVENUE OF THE AMERICAS NEW YORK NY 10019 A DE CORPNY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Casey, Martin J Mesa, AZ 4 16
Sheppard, John E Bensalem, PA 3 56

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