Alpha tantalum thin film circuit device

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United States of America Patent

PATENT NO 4410867
SERIAL NO

06197878

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Fabricating thin film RC networks (10) includes forming alpha tantalum capacitor base electrodes (14be) on a substrate (12), while simultaneously forming alpha tantalum anodization bus bars (14p and 14s) on the substrate. A portion of each base electrode (14be) then is anodized to form a capacitor dielectric (20) in a single anodizing step. A tantalum nitride resistor film (24) and electrically conductive films (26 and 28) then are deposited on the resultant assembly. Next, portions of the electrically conductive films are removed to define portions of capacitor counterelectrodes (22), to expose sections of the tantalum nitride resistor film (24) destined for use as resistors (24r). and to define conductor networks (30). Portions of the tantalum nitride resistor film (24) then are removed to define capacitor counterelectrode portions (24ce) and the resistors (24r), while simultaneously removing the anodization bus bars (14p and 14s). The resultant networks (10) then are thermally stabilized.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
AT & T TECHNOLOGIES, INC.,NEW YORK, NY1

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arcidiacono, Frank R North Andover, MA 2 62
Koerckel, Gerard J Andover, MA 2 62

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