Method for pure ion plating using magnetic fields
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United States of America Patent
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Dec 13, 1983
Grant Date -
N/A
app pub date -
Apr 22, 1983
filing date -
Apr 22, 1983
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for ion plating a substrate (b 40) within a chamber (52) with a plating material (20) is provided. The method includes evacuating the chamber (52) and vaporizing the plating material (20) within the evacuated chamber (52). An electron saturated magnetic field (30) is placed adjacent the substrate (40) for positive ionization of the evaporant atoms of the vaporized plating material (20). A negative bias (61, 62) is applied to the substrate (40) for attracting positive ions of the vaporized plating material (20).
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