Reversibly programmable polycrystalline silicon memory element
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 13, 1983
Grant Date -
N/A
app pub date -
Feb 9, 1981
filing date -
Feb 9, 1981
priority date (Note) -
Expired
status (Latency Note)
Importance
Loading Importance Indicators... 
Abstract
A polycrystalline silicon memory element having an impurity concentration in the range of 10.sup.17 to 10.sup.20 atoms per cubic centimeter is reversibly switchable from a high to a low resistance state through a negative resistance region using a voltage above the threshold having a ramped trailing edge.
Loading the Abstract Image...
OK
First Claim
Family
Loading Family data...
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully