Thin film transistors
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United States of America Patent
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-
Dec 20, 1983
Issued Date -
N/A
app pub date -
May 26, 1981
filing date -
Jul 25, 1979
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A thin film transistor has a semiconductor layer, an insulating layer and source, drain and gate electrodes. The improvement comprises creating an enhanced conductivity layer in the semiconductor by ion implantation or diffusion on phased deposition. The benefits of the enhanced conductivity layer are that transistor action is obtained without the conventional annealing step and D.C. stability is much improved.
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