Memory device

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United States of America Patent

PATENT NO 4422160
SERIAL NO

06336986

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Abstract

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An improved memory device operable at a high speed and with a small power consumption is disclosed. The memory device comprises memory cells arrayed in rows and columns, a row decoder for selecting the rows, a column decoder for selecting columns, a shift register arranged in parallel with the column decoder, first control means for operatively enabling the shift register and second control means for suppressing the operation of the column decoder when the shift register is enabled.

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Patent Owner(s)

Patent OwnerAddress
NIPPON ELECTRIC CO LTD 33-1 SHIBA GOCHOME MINATO-KU TOKYO JAPANNot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Watanabe, Hiroshi Tokyo, JP 915 12785

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