Thin film capacitor with a dual bottom electrode structure

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United States of America Patent

PATENT NO 4423087
SERIAL NO

06335136

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Abstract

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A thin film capacitor having a dual bottom electrode is provided. The bottom electrode comprises a first layer of metal and a second layer of platinum, said metal of the first layer being of the nature of forming a stable intermetallic phase with the platinum during heat treatment. The metal of the first layer is typically selected from the group consisting of Hf, Zr, and Ta. The thin film capacitor is suitable for the decoupling capacitor of VLSI.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
INTERNATIONAL BUSINESS MACHINES CORPORATIONARMONK, NY46918

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Howard, James K Fishkill, NY 48 1464
Srikrishnan, Kris V Wappingers Falls, NY 21 1219

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Patent Info (Count) # Cites Year
 
SHARP KABUSHIKI KAISHA (2)
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INTERNATIONAL BUSINESS MACHINES CORPORATION (6)
* 5383088 Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics 52 1993
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6278147 On-chip decoupling capacitor with bottom hardmask 9 2000
6504203 Method of forming a metal-insulator-metal capacitor for dual damascene interconnect processing and the device so formed 5 2001
* 6387754 Method of forming an on-chip decoupling capacitor with bottom hardmask 4 2001
6762108 Method of forming a metal-insulator-metal capacitor for dual damascene interconnect processing and the device so formed 2 2002
 
Other [Check patent profile for assignment information] (1)
6303457 Integrated circuit having integral decoupling capacitor 15 1997
 
U.S. PHILIPS CORPORATION (1)
* 5122477 Method of manufacturing a semiconductor device comprising capacitors which form memory elements and comprise a ferroelectric dielectric material having multilayer lower and upper electrodes 69 1991
 
ALPS ELECTRIC CO., LTD. (1)
* 6477036 Temperature compensating thin-film capacitor 7 2001
 
FREESCALE SEMICONDUCTOR, INC. (1)
* 5356833 Process for forming an intermetallic member on a semiconductor substrate 37 1993
 
MICRON TECHNOLOGY, INC. (3)
6642567 Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices 42 2000
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* 2006/0051,963 Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices 2 2005
 
GLOBALFOUNDRIES INC. (2)
* 5668399 Semiconductor device with increased on chip decoupling capacitance 34 1996
* 5739045 Semiconductor device with increased on chip decoupling capacitance 5 1996
 
SAMSUNG ELECTRONICS CO., LTD. (1)
* 9455259 Semiconductor devices including diffusion barriers with high electronegativity metals 0 2015
 
HONEYWELL INC. (1)
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INFINEON TECHNOLOGIES AG (1)
* 2012/0057,270 CAPACITOR AND METHOD FOR MAKING SAME 3 2010
 
QIMONDA AG (1)
* 2007/0210,367 Storage capacitor and method for producing such a storage capacitor 1 2006
 
UNIVERSITY OF MARYLAND, BALTIMORE (1)
* 5838035 Barrier layer for ferroelectric capacitor integrated on silicon 111 1997
 
Ultrasource, Inc. (11)
6761963 Integrated thin film capacitor/inductor/interconnect system and method 21 2001
6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
6890629 Integrated thin film capacitor/inductor/interconnect system and method 10 2003
* 2004/0081,811 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
* 2004/0080,021 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
GENERAL MOTORS CORPORATION (1)
* 5780173 Durable platinum/polyimide sensing structures 7 1996
 
RENESAS ELECTRONICS CORPORATION (1)
* 5406447 Capacitor used in an integrated circuit and comprising opposing electrodes having barrier metal films in contact with a dielectric film 90 1992
 
HYNIX SEMICONDUCTOR INC. (2)
* 6706607 Method for fabricating capacitor in semiconductor device 1 2002
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SYMETRIX CORPORATION (1)
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NEC ELECTRONICS CORPORATION (1)
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Radiant Technologies, Inc. (1)
* 6459137 Method for constructing ferroelectric capacitors on integrated circuit substrates 0 1995
* Cited By Examiner