Thin film capacitor with a dual bottom electrode structure

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United States of America Patent

PATENT NO 4423087
SERIAL NO

06335136

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Abstract

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A thin film capacitor having a dual bottom electrode is provided. The bottom electrode comprises a first layer of metal and a second layer of platinum, said metal of the first layer being of the nature of forming a stable intermetallic phase with the platinum during heat treatment. The metal of the first layer is typically selected from the group consisting of Hf, Zr, and Ta. The thin film capacitor is suitable for the decoupling capacitor of VLSI.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
INTERNATIONAL BUSINESS MACHINES CORPORATIONARMONK, NY46802

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Howard, James K Fishkill, NY 48 1471
Srikrishnan, Kris V Wappingers Falls, NY 21 1247

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