RF Amplifier circuit employing FET devices
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United States of America Patent
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-
Dec 27, 1983
Grant Date -
N/A
app pub date -
Oct 29, 1981
filing date -
Oct 29, 1981
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An RF amplifier including first and second FETs which are interconnected to function as a single transistor with improved gate. An input signal is applied across the gate and source of the first FET, and an output signal is obtained across the drain and source of the second transistor. RF coupling of the FETs is provided by first and second serially connected transmission lines connected between the drain of the first FET and the gate of the second FET. A third transmission line connects the common terminal of the first and second transmission line to circuit ground. In a preferred embodiment, the amplifier comprises a monolithic circuit formed in gallium arsenide with the transmission lines comprising microstrip.
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