Thin film transistor

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United States of America Patent

PATENT NO 4425572
SERIAL NO

06261545

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Abstract

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A thin film transistor comprising a substrate having source and drain electrodes formed thereon, a semiconductor layer making contact in part with the source electrode and in part with the drain electrode, a gate electrode, and a gate insulating layer positioned between the semiconductor layer and the gate electrode is disclosed. A portion of the drain electrode is held in overlapping relation to a portion of the gate electrode while a portion of the source electrode is spaced apart from said gate electrode.

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Patent Owner(s)

Patent OwnerAddress
SHARP KABUSHIKI KAISHASAKAI-SHI OSAKA 590-8522
JAPAN ELECTRONIC INDUSTRY DEVELOPMENT ASSOCIATION5-8 SHIBAKOEN 3-CHOME MINATO-KU TOKYO-TO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nonomura, Keisaku Nara, JP 24 596
Takafuji, Yutaka Nara, JP 108 4765
Takechi, Sadatoshi Tenri, JP 17 274
Wada, Tomio Nara, JP 38 854

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