Thin film solar cell

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 4433202
SERIAL NO

06362115

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A thin film solar cell formed on a substrate, comprising at least first and second electrodes, at least one of which is capable of passing light, a silicon film interposed between said first and second electrodes, and at least one junction formed in the silicon film for separating electrons and positive holes when the cell is exposed to light, wherein said silicon film comprises a mixed phase consisting of a polycrystalline phase and an amorphous phase, and includes at least about 50% by volume of fibrous crystalline grains, each of said grains having a maximum bottom diameter of about 1 .mu.m and a minimum height of about 50 nm and having its grain boundaries terminated with a monovalent element. The solar cell has a high photoelectric conversion efficiency comparable to that of a single-crystal solar cell, and can be produced at a low cost.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HITACHI, LTD.TOKYO14031

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishizaka, Akitoshi Kokubunji, JP 12 134
Katayama, Yoshifumi Tokorozawa, JP 18 293
Maruyama, Eiichi Kodaira, JP 34 593
Matsubara, Hirokazu Tokyo, JP 12 287
Murayama, Yoshimasa Koganei, JP 12 109
Shimada, Toshikazu Tokyo, JP 26 684
Shintani, Akira Machida, JP 11 109
Shiraki, Yasuhiro Hino, JP 22 259

Cited Art Landscape

Patent Info (Count) # Cites Year
 
THOMSON-CSF (1)
* 4321420 Process for producing a layer containing silicon and photoelectric conversion device utilizing this process 9 1980
 
MOTOROLA, INC. (1)
* 4343830 Method for improving the efficiency of solar cells having imperfections 16 1980
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
MINNESOTA MINING AND MANUFACTURING COMPANY (1)
* 5155565 Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate 13 1990
 
AURIA SOLAR CO., LTD. (1)
* 2011/0168,246 THIN-FILM SOLAR CELL AND MANUFACTURING METHOD THEREOF 6 2011
 
Other [Check patent profile for assignment information] (1)
* 2009/0266,412 Solar Cell, Prefabricated Base Part for a Solar Cell and Method for Manufacturing Such a Base Part and a Solar Cell 0 2006
 
LG LCD INC. (1)
* 6177301 Method of fabricating thin film transistors for a liquid crystal display 113 1999
 
THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (2)
* 9299863 Ultrathin film multi-crystalline photovoltaic device 0 2009
* 2010/0071,760 ULTRATHIN FILM MULTI-CRYSTALLINE PHOTOVOLTAIC DEVICE 9 2009
 
HITACHI CABLE, LTD. (2)
* 6777714 Crystalline silicon semiconductor device and method for fabricating same 2 2001
* 6703289 Method for forming crystalline silicon layer and crystalline silicon semiconductor device 8 2001
 
Tonen Kabushiki Kaisha (1)
* 5017308 Silicon thin film and method of producing the same 26 1989
 
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (1)
* 8163404 Chlorine, fluorine and lithium co-doped transparent conductive films and methods for fabricating the same 0 2008
 
KANEKA CORPORATION (2)
* 6297443 Thin film photoelectric transducer 18 1999
* 6265288 Method of manufacturing silicon-based thin-film photoelectric conversion device 27 1999
 
SANYO ELECTRIC CO., LTD. (2)
7075052 Photoelectric conversion device 0 2003
* 2004/0065,807 Photoelectric conversion device 0 2003
 
NISSIN ELECTRIC CO., LTD. (1)
* 6468884 Method of forming silicon-contained crystal thin film 27 2001
 
EASTMAN KODAK COMPANY (1)
* 4639277 Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material 73 1984
 
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (10)
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* 4559552 PIN semiconductor photoelectric conversion device with two oxide layers 9 1983
* 4604231 Silicon fiber and method of making the same 0 1984
* 4843022 Method of making fibrous silicon semiconductor by plasma CVD 17 1987
* 5478777 Method of making a semiconductor photoelectric conversion device having a crystalline I-type layer 38 1994
* 5580820 Method of forming a semiconductor material having a substantially I-type crystalline layer 6 1995
* 2009/0293,954 Photoelectric Conversion Device And Method For Manufacturing The Same 11 2009
* 2010/0307,590 PHOTOELECTRIC CONVERSION DEVICE 3 2010
* 9099576 Photoelectric conversion device and manufacturing method thereof 0 2011
* 2011/0273,021 Photoelectric Conversion Device and Manufacturing Method Thereof 4 2011
 
United Solar Systems Corporation (2)
* 4600801 Fluorinated, p-doped microcrystalline silicon semiconductor alloy material 16 1984
* 4609771 Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material 18 1985
 
LG DISPLAY CO., LTD. (1)
6521473 Method of fabricating a liquid crystal display 40 2000
 
AT&T LABS, INC. (1)
* 4675715 Semiconductor integrated circuit vertical geometry impedance element 41 1985
 
PENNSYLVANIA RESEARCH CORPORATION, THE (1)
* 5147826 Low temperature crystallization and pattering of amorphous silicon films 439 1990
 
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (1)
* 4578696 Thin film semiconductor device 3 1983
 
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. (1)
* 5720827 Design for the fabrication of high efficiency solar cells 55 1996
 
Toa Nenryo Kogyo Kabushiki Kaisha (1)
* 4598304 Thin film devices of silicon 11 1985
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (2)
* 6518494 Silicon structure, method for producing the same, and solar battery using the silicon structure 22 1996
* 2003/0106,581 Silicon structure, method for producing the same, and solar battery using the silicon structure 7 2002
 
MITSUI CHEMICALS, INC. (1)
* 5677236 Process for forming a thin microcrystalline silicon semiconductor film 90 1996
 
CANON KABUSHIKI KAISHA (4)
* 4926229 Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material 20 1988
* 4982251 Semiconductor element 3 1990
* 7087831 Photoelectric conversion device and method of production thereof 13 2003
* 2004/0060,591 Photoelectric conversion device and method of production thereof 7 2003
* Cited By Examiner