US Patent No: 4,433,202

Number of patents in Portfolio can not be more than 2000

Thin film solar cell

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Abstract

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A thin film solar cell formed on a substrate, comprising at least first and second electrodes, at least one of which is capable of passing light, a silicon film interposed between said first and second electrodes, and at least one junction formed in the silicon film for separating electrons and positive holes when the cell is exposed to light, wherein said silicon film comprises a mixed phase consisting of a polycrystalline phase and an amorphous phase, and includes at least about 50% by volume of fibrous crystalline grains, each of said grains having a maximum bottom diameter of about 1 .mu.m and a minimum height of about 50 nm and having its grain boundaries terminated with a monovalent element. The solar cell has a high photoelectric conversion efficiency comparable to that of a single-crystal solar cell, and can be produced at a low cost.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HITACHI, LTD.TOKYO13929

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishizaka, Akitoshi Kokubunji, JP 12 129
Katayama, Yoshifumi Tokorozawa, JP 17 287
Maruyama, Eiichi Kodaira, JP 33 582
Matsubara, Hirokazu Tokyo, JP 12 280
Murayama, Yoshimasa Koganei, JP 12 107
Shimada, Toshikazu Tokyo, JP 25 667
Shintani, Akira Machida, JP 11 108
Shiraki, Yasuhiro Hino, JP 22 246

Cited Art Landscape

Patent Info (Count) # Cites Year
 
THOMSON-CSF (1)
* 4,321,420 Process for producing a layer containing silicon and photoelectric conversion device utilizing this process 9 1980
 
MOTOROLA, INC. (1)
* 4,343,830 Method for improving the efficiency of solar cells having imperfections 15 1980
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
MINNESOTA MINING AND MANUFACTURING COMPANY (1)
* 5,155,565 Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate 12 1990
 
LG LCD, INC. (1)
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THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (1)
* 2010/0071,760 ULTRATHIN FILM MULTI-CRYSTALLINE PHOTOVOLTAIC DEVICE 6 2009
 
HITACHI CABLE, LTD. (2)
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Tonen Kabushiki Kaisha (1)
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INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (1)
* 8,163,404 Chlorine, fluorine and lithium co-doped transparent conductive films and methods for fabricating the same 0 2008
 
KANEKA CORPORATION (2)
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* 6,265,288 Method of manufacturing silicon-based thin-film photoelectric conversion device 25 1999
 
SANYO ELECTRIC CO., LTD. (1)
7,075,052 Photoelectric conversion device 0 2003
 
NISSIN ELECTRIC CO., LTD. (1)
* 6,468,884 Method of forming silicon-contained crystal thin film 23 2001
 
EASTMAN KODAK COMPANY (1)
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Semiconductor Energy Laboratory Co., Ltd. (9)
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* 2010/0307,590 PHOTOELECTRIC CONVERSION DEVICE 2 2010
* 9,099,576 Photoelectric conversion device and manufacturing method thereof 0 2011
* 2011/0273,021 Photoelectric Conversion Device and Manufacturing Method Thereof 2 2011
 
United Solar Systems Corporation (2)
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LG DISPLAY CO., LTD. (1)
6,521,473 Method of fabricating a liquid crystal display 39 2000
 
AT&T LABS, INC. (1)
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PENNSYLVANIA RESEARCH CORPORATION, THE (1)
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AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (1)
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UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. (1)
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Toa Nenryo Kogyo Kabushiki Kaisha (1)
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MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
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MITSUI CHEMICALS, INC. (1)
* 5,677,236 Process for forming a thin microcrystalline silicon semiconductor film 85 1996
 
CANON KABUSHIKI KAISHA (3)
* 4,926,229 Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material 20 1988
* 4,982,251 Semiconductor element 3 1990
* 7,087,831 Photoelectric conversion device and method of production thereof 12 2003
* Cited By Examiner