Technique for inspecting semiconductor wafers for particulate contamination
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United States of America Patent
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Apr 3, 1984
Grant Date -
N/A
app pub date -
Nov 5, 1981
filing date -
Nov 5, 1981
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A laser beam (88) is raster scanned over the surface of a patterned semiconductor wafer (66) at an angle normal thereto. A plurality of detectors, radially spaced from the wafer (66) and substantially coplanar therewith detect light scattered from contaminating particulate thereon. The detected light is converted into a video signal that is forwarded to a video monitor (84) to display the particulate material while eliminating the patterned surface background.
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