p-i-n Photodiodes
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United States of America Patent
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Apr 17, 1984
Issued Date -
N/A
app pub date -
Jul 29, 1982
filing date -
May 28, 1980
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Photodiodes (10) are fabricated in a single step diffusion process which exploits the characteristic of certain acceptors to form an anomalous diffusion profile (VI) including shallow and deep fronts (VIa and b) joined by an upwardly concave segment (VIc). By performing this type of diffusion into a low-doped n.sup.- -type body (12) with a carrier concentration (VII) below that of the concave segment, a p.sup.+ -p.sup.-junction (15) is formed at the depth of the concave segment and a p.sup.--n.sup.- junction (17) is formed at a greater depth. The zone (16) between the junctions is at least partially depleted and forms the active region of a p.sup.+ -p.sup.- -n.sup.- photodiode. Specifically described are InP:Cd photodiodes.
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