Film forming method
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United States of America Patent
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-
Apr 24, 1984
Grant Date -
N/A
app pub date -
Jul 21, 1982
filing date -
Jul 22, 1981
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A film forming method by plasma sputtering is provided to attain a composite film on a substrate. A target plate having metal materials in a different pattern is prepared in opposition to the substrate. A plasma is created by a planar magnetron sputtering electrode structure. The plasma is shifted magnetically on the target plate by at least three magnetically coupled magnetic poles to deposit the materials into a film with a uniform thickness and a desired composition on the substrate.
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