Field effect current mode logic gate

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United States of America Patent

PATENT NO 4445051
SERIAL NO

06277629

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Abstract

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Disclosed is a field effect current mode logic gate comprised of a current source for supplying a constant current, and a differential amplifier having first and second branches for passing respective portions of the constant current. The first branch includes a plurality of parallel-coupled or serially-coupled enhancement field effect transistors having a positive threshold voltage and having respective gates for receiving respective input logic signals; and the second branch includes a depletion field effect transistor having a negative threshold voltage, and a grounded gate. The magnitudes of the current portions in the first and second branches are representative of the magnitude of the input logic signals relative to the positive threshold voltage plus the absolute value of the negative threshold voltage.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Elmasry, Mohamed I Waterloo, CA 8 148

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