CMOS Device with ion-implanted channel-stop region and fabrication method therefor
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United States of America Patent
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Jul 3, 1984
Grant Date -
N/A
app pub date -
May 27, 1980
filing date -
May 27, 1980
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Integrated MOS devices with intermediate ion-implanted regions for minimizing device interaction. Several configurations are detailed; they are individually or, in combination, extremely useful in maximizing the density of ROM functions implemented in the integrated circuit format. In particular, one of the embodiments enhances the achievable density in a row-column array used in ROM memories. Used together, the embodiments are especially suited for a ROM of the CMOS genre.
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